Two-Dimensional MoxW1-xS2 Graded Alloys: Growth and Optical Properties.

Two-dimensional (2D) transition metal dichalcogenides can be alloyed by substitution at the metal atom site with negligible effect on lattice strain, but with significant influence on optical and electrical properties. In this work, we establish the relationship between composition and optical properties of the MoxW1-xS2 alloy by investigating the effect of continuously-varying composition on photoluminescence intensity. We developed a new process for growth of two-dimensional MoxW1-xS2 alloys that span nearly the full composition range along a single crystal, thus avoiding any sample-related heterogeneities. The graded alloy crystals were grown using a diffusion-based chemical vapor deposition (CVD) method that starts by synthesizing a WS2 crystal with a graded point defect distribution, followed by Mo alloying in the second stage. We show that point defects promote the diffusion and alloying, as confirmed by Raman and photoluminescence measurements, density functional theory calculations of the reaction path, and observation that no alloying occurs in CVD-treated exfoliated crystals with low defect density. We observe a significant dependence of the optical quantum yield as a function of the alloy composition reaching the maximum intensity for the equicompositional Mo0.5W0.5S2 alloy. Furthermore, we map the growth-induced strain distribution within the alloyed crystals to decouple composition and strain effects on optical properties: at the same composition, we observe significant decrease in quantum yield with induced strain. Our approach is generally applicable to other 2D materials as well as the optimization of other composition-dependent properties within a single crystal.

Diffusion-Mediated Synthesis of MoS2/WS2 Lateral Heterostructures.

Controlled growth of two-dimensional transition metal dichalcogenide (TMD) lateral heterostructures would enable on-demand tuning of electronic and optoelectronic properties in this new class of materials. Prior to this work, compositional modulations in lateral TMD heterostructures have been considered to depend solely on the growth chronology. We show that in-plane diffusion can play a significant role in the chemical vapor deposition of MoS2/WS2 lateral heterostructures leading to a variety of nontrivial structures whose composition does not necessarily follow the growth order. Optical, structural, and compositional studies of TMD crystals captured at different growth temperatures and in different diffusion stages suggest that compositional mixing versus segregation are favored at high and low growth temperatures, respectively. The observed diffusion mechanism will expand the realm of possible lateral heterostructures, particularly ones that cannot be synthesized using traditional methods.